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G2305
manufacturer:
Goford Semiconductor
Description:
P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
7.8 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
SOT-23-3
Rds On (Max) @ Id, Vgs:
50mOhm @ 4.1A, 4.5V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Power Dissipation (Max):
1.7W (Ta)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.8A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G2305
Introduction
P-Channel 20 V 4.8A (Ta) 1.7W (Ta) Surface Mount SOT-23-3
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