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G16N03S
manufacturer:
Goford Semiconductor
Description:
N30V, 16A,RD<10M@10V,VTH1.0V~2.5
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
16.6 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
950 PF @ 15 V
Series:
G
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
8-SOP
Rds On (Max) @ Id, Vgs:
10mOhm @ 10A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Power Dissipation (Max):
2.5W (Tc)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G16N03S
Introduction
N-Channel 30 V 16A (Tc) 2.5W (Tc) Surface Mount 8-SOP
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