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G23N06K
manufacturer:
Goford Semiconductor
Description:
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Supplier Device Package:
TO-252 (DPAK)
Rds On (Max) @ Id, Vgs:
35mOhm @ 20A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
590 PF @ 15 V
Drain To Source Voltage (Vdss):
60 V
Power Dissipation (Max):
38W
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C:
23A
Technology:
MOSFET (Metal Oxide)
Model Number:
G23N06K
Introduction
N-Channel 60 V 23A 38W Surface Mount TO-252 (DPAK)
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