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G085P02TS
manufacturer:
Goford Semiconductor
Description:
P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
29 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1255 PF @ 10 V
Series:
-
Vgs (Max):
±8V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Supplier Device Package:
8-TSSOP
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 4.2A, 4.5V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Power Dissipation (Max):
1.05W (Tc)
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
8.2A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G085P02TS
Introduction
P-Channel 20 V 8.2A (Tc) 1.05W (Tc) Surface Mount 8-TSSOP
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