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G11S
manufacturer:
Goford Semiconductor
Description:
P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
47 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
2455 PF @ 10 V
Series:
G
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Supplier Device Package:
8-SOP
Rds On (Max) @ Id, Vgs:
18.4mOhm @ 1A, 4.5V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Power Dissipation (Max):
3.3W (Tc)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G11S
Introduction
P-Channel 20 V 11A (Tc) 3.3W (Tc) Surface Mount 8-SOP
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