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G800N06H
manufacturer:
Goford Semiconductor
Description:
N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
6 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
457 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Supplier Device Package:
SOT-223
Rds On (Max) @ Id, Vgs:
80mOhm @ 3A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.2W (Tc)
Package / Case:
TO-261-4, TO-261AA
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G800N06H
Introduction
N-Channel 60 V 3A (Tc) 1.2W (Tc) Surface Mount SOT-223
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