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G86N06K
manufacturer:
Goford Semiconductor
Description:
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
77 NC @ 10 V
Supplier Device Package:
TO-252 (DPAK)
Rds On (Max) @ Id, Vgs:
8.4mOhm @ 4A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
2860 PF @ 25 V
Drain To Source Voltage (Vdss):
60 V
Power Dissipation (Max):
88W
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C:
68A
Technology:
MOSFET (Metal Oxide)
Model Number:
G86N06K
Introduction
N-Channel 60 V 68A 88W Surface Mount TO-252 (DPAK)
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