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G1002L
manufacturer:
Goford Semiconductor
Description:
N100V,RD(MAX)<250M@10V,VTH1.2V~2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Vgs(th) (Max) @ Id:
2V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
10 NC @ 10 V
Supplier Device Package:
SOT-23-3L
Rds On (Max) @ Id, Vgs:
250mOhm @ 2A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
413 PF @ 50 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
1.3W
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
2A
Technology:
MOSFET (Metal Oxide)
Model Number:
G1002L
Introduction
N-Channel 100 V 2A 1.3W Surface Mount SOT-23-3L
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GT035N10T |
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GT180P08T |
MOSFET P-CH 80V 89A TO-220
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GT023N10M |
N100V,140A,RD<2.7M@10V,VTH2.7V~4
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G040P04T |
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G110N06T |
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G65P06F |
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G080P06T |
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|
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