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G7K2N20HE
manufacturer:
Goford Semiconductor
Description:
N200V, ESD,2A,RD<0.7@10V,VTH1V~2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
10.8 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
568 PF @ 100 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
SOT-223
Rds On (Max) @ Id, Vgs:
700mOhm @ 1A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.8W (Tc)
Package / Case:
TO-261-4, TO-261AA
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G7K2N20HE
Introduction
N-Channel 200 V 2A (Tc) 1.8W (Tc) Surface Mount SOT-223
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