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GT650N15K
manufacturer:
Goford Semiconductor
Description:
N150V,RD(MAX)<65M@10V,VTH2.5V~4.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
600 PF @ 75 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Supplier Device Package:
TO-252
Rds On (Max) @ Id, Vgs:
65mOhm @ 10A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
68W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain To Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
GT650N15K
Introduction
N-Channel 150 V 20A (Tc) 68W (Tc) Surface Mount TO-252
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