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18N10
manufacturer:
Goford Semiconductor
Description:
N100V,RD(MAX)<53M@10V,RD(MAX)<63
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
28 NC @ 10 V
Supplier Device Package:
TO-252 (DPAK)
Rds On (Max) @ Id, Vgs:
53mOhm @ 10A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1318 PF @ 50 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
62.5W
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C:
25A
Technology:
MOSFET (Metal Oxide)
Model Number:
18N10
Introduction
N-Channel 100 V 25A 62.5W Surface Mount TO-252 (DPAK)
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GT035N10T |
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|
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|
G080N10T |
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|
GT180P08T |
MOSFET P-CH 80V 89A TO-220
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|
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|
GT023N10M |
N100V,140A,RD<2.7M@10V,VTH2.7V~4
|
|
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G040P04T |
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|
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G110N06T |
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
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|
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|
G65P06F |
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G080P06T |
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
|
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