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630A
manufacturer:
Goford Semiconductor
Description:
N200V,RD(MAX)<280M@10V,VTH1V~3V,
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
11.8 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
509 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
TO-252
Rds On (Max) @ Id, Vgs:
280mOhm @ 4.5A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
83W
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
11A
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
630A
Introduction
N-Channel 200 V 11A 83W Surface Mount TO-252
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