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GC11N65D5
manufacturer:
Goford Semiconductor
Description:
N650V, 11A,RD<360M@10V,VTH2.5V~4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds:
901 PF @ 50 V
Series:
G
Vgs (Max):
±30V
Package:
Tape & Reel (TR)
Supplier Device Package:
8-DFN (4.9x5.75)
Rds On (Max) @ Id, Vgs:
360mOhm @ 5.5A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
78W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
Model Number:
GC11N65D5
Introduction
N-Channel 650 V 11A (Tc) 78W (Tc) Surface Mount 8-DFN (4.9x5.75)
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