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FBG04N30BSH
manufacturer:
EPC Space, LLC
Description:
GAN FET HEMT 40V 30A 4FSMD-B
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
11.4 NC @ 5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
1300 PF @ 20 V
Series:
E-GaN®
Vgs (Max):
+6V, -4V
Vgs(th) (Max) @ Id:
2.5V @ 9mA
Supplier Device Package:
4-SMD
Rds On (Max) @ Id, Vgs:
9mOhm @ 30A, 5V
Mfr:
EPC Space, LLC
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Power Dissipation (Max):
-
Package / Case:
4-SMD, No Lead
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
GaNFET (Gallium Nitride)
FET Feature:
-
Model Number:
FBG04N30BSH
Introduction
N-Channel 40 V 30A (Tc) Surface Mount 4-SMD
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