english
FBG20N18BSH
manufacturer:
EPC Space, LLC
Description:
GAN FET HEMT 200V 18A 4FSMD-B
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
7 NC @ 5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
900 PF @ 100 V
Series:
E-GaN®
Vgs (Max):
+6V, -4V
Vgs(th) (Max) @ Id:
2.5V @ 3mA
Supplier Device Package:
4-SMD
Rds On (Max) @ Id, Vgs:
28mOhm @ 18A, 5V
Mfr:
EPC Space, LLC
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Power Dissipation (Max):
-
Package / Case:
4-SMD, No Lead
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technology:
GaNFET (Gallium Nitride)
FET Feature:
-
Model Number:
FBG20N18BSH
Introduction
N-Channel 200 V 18A (Tc) Surface Mount 4-SMD
Related Products
| Image | Part # | Description | |
|---|---|---|---|
|
|
FBG04N30BSH |
GAN FET HEMT 40V 30A 4FSMD-B
|
Send RFQ
Stock:
MOQ: