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G15N10C
manufacturer:
Goford Semiconductor
Description:
N100V,RD(MAX)<110M@10V,RD(MAX)<1
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
22 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
TO-252
Rds On (Max) @ Id, Vgs:
110mOhm @ 8A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
42W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G15N10C
Introduction
N-Channel 100 V 15A (Tc) 42W (Tc) Surface Mount TO-252
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GT035N10T |
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GT180P08T |
MOSFET P-CH 80V 89A TO-220
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|
GT023N10M |
N100V,140A,RD<2.7M@10V,VTH2.7V~4
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G040P04T |
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G110N06T |
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G65P06F |
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G080P06T |
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|
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