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GC11N65T
manufacturer:
Goford Semiconductor
Description:
N650V,RD(MAX)<360M@10V,VTH2.5V~4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
901 PF @ 50 V
Series:
-
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-220
Rds On (Max) @ Id, Vgs:
360mOhm @ 5.5A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
78W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
GC11N65T
Introduction
N-Channel 650 V 11A (Tc) 78W (Tc) Through Hole TO-220
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