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18N20J
manufacturer:
Goford Semiconductor
Description:
N200V, 18A,RD<0.16@10V,VTH1V~3V,
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
17.7 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
836 PF @ 25 V
Series:
-
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
TO-251
Rds On (Max) @ Id, Vgs:
160mOhm @ 9A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
65.8W (Tc)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tj)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
18N20J
Introduction
N-Channel 200 V 18A (Tj) 65.8W (Tc) Through Hole TO-251
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