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GT52N10T
manufacturer:
Goford Semiconductor
Description:
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
44.5 NC @ 10 V
Supplier Device Package:
TO-220
Rds On (Max) @ Id, Vgs:
9mOhm @ 50A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
2626 PF @ 50 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
227W
Package / Case:
TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C:
80A
Technology:
MOSFET (Metal Oxide)
Model Number:
GT52N10T
Introduction
N-Channel 100 V 80A 227W Through Hole TO-220
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| Image | Part # | Description | |
|---|---|---|---|
|
|
GT035N10T |
N100V,190A,RD<3.5M@10V,VTH2.0V~4
|
|
|
|
G080N10T |
MOSFET N-CH 100V 180A TO-220
|
|
|
|
GT065P06T |
P-60V,-82A,RD(MAX)<7.5M@-10V,VTH
|
|
|
|
GT042P06T |
MOSFET, P-CH,-60V,-160A,RD(MAX)<
|
|
|
|
GT180P08T |
MOSFET P-CH 80V 89A TO-220
|
|
|
|
GT023N10M |
N100V,140A,RD<2.7M@10V,VTH2.7V~4
|
|
|
|
G040P04T |
MOSFET P-CH 40V 222A TO-220
|
|
|
|
G110N06T |
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
|
|
|
|
G65P06F |
P-CH, -60V, 65A, RD(MAX)<18M@-10
|
|
|
|
G080P06T |
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
|
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