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GT100N12M
manufacturer:
Goford Semiconductor
Description:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
50 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
3050 PF @ 60 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Supplier Device Package:
TO-263
Rds On (Max) @ Id, Vgs:
10mOhm @ 35A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
120W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
120 V
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
GT100N12M
Introduction
N-Channel 120 V 70A (Tc) 120W (Tc) Surface Mount TO-263
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GT035N10T |
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GT180P08T |
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GT023N10M |
N100V,140A,RD<2.7M@10V,VTH2.7V~4
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G040P04T |
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