G08N03D2
manufacturer:
Goford Semiconductor
Description:
N30V,8A,RD<20M@10V,VTH1.0V~2.0V,
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
15 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
681 PF @ 15 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 250µA
Supplier Device Package:
6-DFN (2x2)
Rds On (Max) @ Id, Vgs:
20mOhm @ 4A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
17W (Tc)
Package / Case:
6-WDFN Exposed Pad
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 8A (Tc) 17W (Tc) Surface Mount 6-DFN (2x2)
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