G08N02L
manufacturer:
Goford Semiconductor
Description:
N20V, 8A, RD<12.3M@4.5V,VTH0.5V~
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
22 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
929 PF @ 10 V
Series:
-
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Supplier Device Package:
SOT-23-3
Rds On (Max) @ Id, Vgs:
12.3mOhm @ 12A, 4.5V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Power Dissipation (Max):
1.5W (Tc)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 20 V 8A (Tc) 1.5W (Tc) Surface Mount SOT-23-3
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