GT6K2P10KH
manufacturer:
Goford Semiconductor
Description:
MOSFET P-CH 100V 4.3A TO-252
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
10 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
247 PF @ 50 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
TO-252
Rds On (Max) @ Id, Vgs:
670mOhm @ 1A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
25W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-Channel 100 V 4.3A (Tc) 25W (Tc) Surface Mount TO-252
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|---|---|---|---|
|
|
GT035N10T |
N100V,190A,RD<3.5M@10V,VTH2.0V~4
|
|
|
|
G080N10T |
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|
GT065P06T |
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GT042P06T |
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|
|
GT180P08T |
MOSFET P-CH 80V 89A TO-220
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|
|
|
GT023N10M |
N100V,140A,RD<2.7M@10V,VTH2.7V~4
|
|
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G040P04T |
MOSFET P-CH 40V 222A TO-220
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|
|
|
G110N06T |
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
|
|
|
|
G65P06F |
P-CH, -60V, 65A, RD(MAX)<18M@-10
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|
G080P06T |
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
|
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