GT100N04K
manufacturer:
Goford Semiconductor
Description:
N40V,50A,RD<10M@10V,VTH1.2V~2.2V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
32 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
644 PF @ 20 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Supplier Device Package:
TO-252
Rds On (Max) @ Id, Vgs:
10mOhm @ 5A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
80W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 50A (Tc) 80W (Tc) Surface Mount TO-252
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|---|---|---|---|
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GT035N10T |
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GT180P08T |
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GT023N10M |
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G040P04T |
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G110N06T |
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G65P06F |
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G080P06T |
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|
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