GT019N04D5
manufacturer:
Goford Semiconductor
Description:
N40V,120A,RD<2.8M@10V,VTH1.0V~2.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
95 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
2840 PF @ 20 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
8-DFN (4.9x5.75)
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 10A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
120W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 120A (Tc) 120W (Tc) Surface Mount 8-DFN (4.9x5.75)
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GT180P08T |
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GT023N10M |
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