GT011N03D5E
manufacturer:
Goford Semiconductor
Description:
MOSFET N-CH ESD 30V 209A DFN5*6-
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
98 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
6503 PF @ 15 V
Series:
-
Vgs (Max):
±16V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
8-DFN (4.9x5.75)
Rds On (Max) @ Id, Vgs:
-
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
89W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
209A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 209A (Tc) 89W (Tc) Surface Mount 8-DFN (4.9x5.75)
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|---|---|---|---|
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GT035N10T |
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GT180P08T |
MOSFET P-CH 80V 89A TO-220
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GT023N10M |
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G040P04T |
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G65P06F |
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G080P06T |
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|
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