G12P10TE
manufacturer:
Goford Semiconductor
Description:
P-100V,-12A,RD(MAX)<200M@-10V,VT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
760 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
TO-220
Rds On (Max) @ Id, Vgs:
200mOhm @ 6A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
40W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-Channel 100 V 12A (Tc) 40W (Tc) Through Hole TO-220
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|---|---|---|---|
|
|
GT035N10T |
N100V,190A,RD<3.5M@10V,VTH2.0V~4
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|
|
|
G080N10T |
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GT065P06T |
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GT042P06T |
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|
GT180P08T |
MOSFET P-CH 80V 89A TO-220
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|
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|
GT023N10M |
N100V,140A,RD<2.7M@10V,VTH2.7V~4
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G040P04T |
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|
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|
G110N06T |
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|
|
|
|
G65P06F |
P-CH, -60V, 65A, RD(MAX)<18M@-10
|
|
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|
G080P06T |
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
|
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