GT025N06AM6
manufacturer:
Goford Semiconductor
Description:
N60V,170A,RD<2.0M@10V,VTH1.2V~2.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
70 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
5058 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
TO263-6
Rds On (Max) @ Id, Vgs:
2mOhm @ 20A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
215W (Tc)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
170A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 60 V 170A (Tc) 215W (Tc) Surface Mount TO263-6
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