G75P04FI
manufacturer:
Goford Semiconductor
Description:
P-40V,-60A,RD(MAX)<7M@-10V,VTH-1
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
106 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
6275 PF @ 20 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
TO-220F
Rds On (Max) @ Id, Vgs:
7mOhm @ 10A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
89W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-Channel 40 V 60A (Tc) 89W (Tc) Through Hole TO-220F
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