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NP80N06MLG-S18-AY

manufacturer:
Renesas
Description:
NP80N06MLG-S18-AY - SWITCHINGN-C
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
128 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
6900 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
MP-25K
Rds On (Max) @ Id, Vgs:
8.6mOhm @ 40A, 10V
Mfr:
Renesas
Operating Temperature:
175°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.8W (Ta), 115W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 60 V 80A (Tc) 1.8W (Ta), 115W (Tc) Through Hole MP-25K
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