GT013N04TI
manufacturer:
Goford Semiconductor
Description:
N40V, 220A,RD<2.5M@10V,VTH2.0V~5
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
50 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
3986 PF @ 20 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
5V @ 250µA
Supplier Device Package:
TO-220
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 30A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
90W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
220A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 220A (Tc) 90W (Tc) Through Hole TO-220
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|---|---|---|---|
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GT035N10T |
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GT180P08T |
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GT023N10M |
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