GPI65005DF
manufacturer:
GaNPower
Description:
GANFET N-CH 650V 5A DFN 5X6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
2.6 NC @ 6 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
45 PF @ 400 V
Series:
-
Vgs (Max):
+7.5V, -12V
Vgs(th) (Max) @ Id:
1.4V @ 1.75mA
Supplier Device Package:
Die
Package / Case:
Die
Mfr:
GaNPower
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V
Power Dissipation (Max):
-
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
5A
Technology:
GaNFET (Gallium Nitride)
FET Feature:
-
Introduction
N-Channel 650 V 5A Surface Mount Die
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| Image | Part # | Description | |
|---|---|---|---|
|
|
GPI65030DFN |
GANFET N-CH 650V 30A DFN8X8
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|
|
|
GPIRGIC15DFV |
Power IC based on Power GaN HEMT
|
|
|
|
GPI65015TO |
GANFET N-CH 650V 15A TO220
|
|
|
|
GPI65015DFN |
GANFET N-CH 650V 15A DFN 8X8
|
|
|
|
GPI65007DF56 |
GaNFET N-CH 650V 7A DFN5x6
|
|
|
|
GPI65010DF56 |
GANFET N-CH 650V 10A DFN 5X6
|
|
|
|
GPI65007DF88 |
GaNFET N-CH 650V 7A DFN8x8
|
|
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|
GPI65005DF68 |
GaNFET N-CH 650V 5A DFN6x8
|
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