GPI65030DFN
manufacturer:
GaNPower
Description:
GANFET N-CH 650V 30A DFN8X8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
5.8 NC @ 6 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
241 PF @ 400 V
Series:
-
Vgs (Max):
+7.5V, -12V
Vgs(th) (Max) @ Id:
1.2V @ 3.5mA
Supplier Device Package:
Die
Package / Case:
Die
Mfr:
GaNPower
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V
Power Dissipation (Max):
-
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
30A
Technology:
GaNFET (Gallium Nitride)
FET Feature:
-
Introduction
N-Channel 650 V 30A Surface Mount Die
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