NXPSC04650D6J
manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARBIDE 650V 4A DPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Last Time Buy
Current - Reverse Leakage @ Vr:
170 µA @ 650 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 4 A
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Capacitance @ Vr, F:
130pF @ 1V, 1MHz
Supplier Device Package:
DPAK
Reverse Recovery Time (trr):
0 Ns
Mfr:
WeEn Semiconductors
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
4A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
NXPSC
Introduction
Diode 650 V 4A Surface Mount DPAK
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| Image | Part # | Description | |
|---|---|---|---|
|
|
NXPSC126506Q |
DIODE SIL CARB 650V 12A TO220AC
|
|
|
|
WNSC10650T6J |
DIODE SIL CARBIDE 650V 10A 5DFN
|
|
|
|
WNSC08650T6J |
DIODE SIL CARBIDE 650V 8A 5DFN
|
|
|
|
WNSC6D08650Q |
DIODE SIL CARB 650V 8A TO220AC
|
|
|
|
BYC30-1200PQ |
DIODE GEN PURP 1.2KV 30A TO220AC
|
|
|
|
WNSC04650T6J |
DIODE SIL CARBIDE 650V 4A 5DFN
|
|
|
|
BYC30B-600PJ |
DIODE GEN PURP 600V 30A D2PAK
|
|
|
|
BYC20-600,127 |
DIODE GEN PURP 500V 20A TO220AC
|
|
|
|
BYC20D-600PQ |
DIODE GEN PURP 600V 20A TO220AC
|
|
|
|
BYC58X-600,127 |
DIODE GEN PURP 600V 8A TO220FP
|
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