NXPSC126506Q
manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARB 650V 12A TO220AC
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Last Time Buy
Current - Reverse Leakage @ Vr:
80 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 12 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
380pF @ 1V, 1MHz
Supplier Device Package:
TO-220AC
Reverse Recovery Time (trr):
0 Ns
Mfr:
WeEn Semiconductors
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
NXPSC
Introduction
Diode 650 V 12A Through Hole TO-220AC
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