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EPC
- Introduction
- Newest Products
Introduction
EPC
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
Newest Products
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EPC2302ENGRT |
TRANS GAN 100V DIE .0019OHM
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EPC2049ENGRT |
GANFET N-CH 40V 16A DIE
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EPC2034 |
GANFET N-CH 200V 48A DIE
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EPC2030ENGRT |
GANFET NCH 40V 31A DIE
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EPC2031ENGRT |
GANFET NCH 60V 31A DIE
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EPC2016 |
GANFET N-CH 100V 11A DIE
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EPC2021ENGR |
TRANS GAN 80V 60A BUMPED DIE
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EPC2014 |
GANFET N-CH 40V 10A DIE OUTLINE
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EPC2015 |
GANFET N-CH 40V 33A DIE OUTLINE
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EPC2619ENGRT |
TRANS GAN 80V .0033OHM 6LGA
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EPC2307ENGRT |
TRANS GAN 200V .010OHM 7QFN
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EPC2020 |
GANFET N-CH 60V 90A DIE
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EPC2014C |
GANFET N-CH 40V 10A DIE OUTLINE
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EPC2016C |
GANFET N-CH 100V 18A DIE
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EPC2252 |
TRANSGAN 80V.011OHM AECQ101 9BGA
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EPC2218A |
TRANS GAN 80V .0032OHM AECQ101
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EPC2030 |
GANFET NCH 40V 31A DIE
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EPC8002 |
GANFET N-CH 65V 2A DIE
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EPC2308ENGRT |
TRANS GAN 150V .006OHM 3X5PQFN
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EPC2050 |
TRANS GAN BUMPED DIE
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EPC2067 |
TRANS GAN .0015OHM 40V 14LGA
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EPC2306ENGRT |
TRANS GAN 100V .0038OHM3X5MM QFN
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EPC2070 |
TRANS GAN DIE 100V .022OHM
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EPC2214 |
GANFET N-CH 80V 10A DIE
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EPC2219 |
TRANS GAN 65V AECQ101 3.3OHM DIE
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EPC2029 |
GANFET N-CH 80V 48A DIE
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EPC2035 |
GANFET N-CH 60V 1.7A DIE
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EPC2069 |
GAN FET 40V .002OHM 8BUMP DIE
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EPC2203 |
GANFET N-CH 80V 1.7A DIE
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EPC8009 |
GANFET N-CH 65V 4A DIE
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