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Goford Semiconductor
- Introduction
- Newest Products
Introduction
Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in the USA, Australia, Shenzhen, Jiangsu, and Hong Kong. We have been always devoting in the R&D and sales of the power Mosfet products. We focus on the energy efficiency, mobility, and reliability to provide cost effective products to the market. We are committed to trying our best to satisfy customers’ needs, provide the most reliable and cost effective products, innovate and do better every day, partner with engineers and customers for mutual value, and work harder to realize our commitment.
Newest Products
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GT035N10T |
N100V,190A,RD<3.5M@10V,VTH2.0V~4
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G080N10T |
MOSFET N-CH 100V 180A TO-220
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GT065P06T |
P-60V,-82A,RD(MAX)<7.5M@-10V,VTH
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GT042P06T |
MOSFET, P-CH,-60V,-160A,RD(MAX)<
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GT180P08T |
MOSFET P-CH 80V 89A TO-220
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GT023N10M |
N100V,140A,RD<2.7M@10V,VTH2.7V~4
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G040P04T |
MOSFET P-CH 40V 222A TO-220
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G110N06T |
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
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G65P06F |
P-CH, -60V, 65A, RD(MAX)<18M@-10
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G080P06T |
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
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GT025N06AT |
N60V, 170A,RD<2.5M@10V,VTH1.2V~2
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GT013N04TI |
N40V, 220A,RD<2.5M@10V,VTH2.0V~5
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G050P03T |
P-30V,-85A,RD(MAX)<5M@-10V,VTH-1
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G75P04FI |
P-40V,-60A,RD(MAX)<7M@-10V,VTH-1
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GT025N06AM6 |
N60V,170A,RD<2.0M@10V,VTH1.2V~2.
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18N20F |
N200V, 18A,RD<0.19@10V,VTH1.0V~3
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G230P06T |
P-60V,-60A,RD(MAX)<20M@-10V,VTH-
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GT105N10F |
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
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GT040N04TI |
N40V, 110A,RD<4M@10V,VTH1.0V~2.5
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GT088N06T |
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
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G75P04T |
MOSFET, P-CH,-40V,-70A,RD(MAX)<7
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GT007N04TL |
N40V,150A,RD<1.5M@10V,VTH1.0V~2.
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G58N06F |
N60V, 35A,RD<13M@10V,VTH1.0V~2.4
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G080N10M |
MOSFET N-CH 100V 180A TO-263
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G040P04M |
MOSFET P-CH 40V 222A TO-263
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630AT |
N200V,RD(MAX)<250M@10V,RD(MAX)<3
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G45P40T |
MOSFET, P-CH, 40V,45A,TO-220
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GT009N04D5 |
N40V,100A,RD<1.3M@10V,VTH1.0V~2.
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G70N04T |
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
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G300P06T |
MOSFET, P-CH, 60V,40A,TO-220
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