TPH3208LDG
manufacturer:
Transphorm
Description:
GANFET N-CH 650V 20A 3PQFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
14 NC @ 8 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
760 PF @ 400 V
Series:
-
Vgs (Max):
±18V
Vgs(th) (Max) @ Id:
2.6V @ 300µA
Supplier Device Package:
3-PQFN (8x8)
Rds On (Max) @ Id, Vgs:
130mOhm @ 13A, 8V
Mfr:
Transphorm
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
96W (Tc)
Package / Case:
3-PowerDFN
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
GaNFET (Gallium Nitride)
FET Feature:
-
Introduction
N-Channel 650 V 20A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)
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TP65H070G4PS |
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TP65H050WSQA |
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TPH3206PD |
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TP65H150G4LSG-TR |
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TP65H480G4JSG-TR |
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