TP90H180PS
manufacturer:
Transphorm
Description:
GANFET N-CH 900V 15A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.6V @ 500µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
10 NC @ 8 V
Rds On (Max) @ Id, Vgs:
205mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
900 V
Vgs (Max):
±18V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
780 PF @ 600 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Transphorm
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Power Dissipation (Max):
78W (Tc)
Technology:
GaNFET (Cascode Gallium Nitride FET)
Base Product Number:
TP90H180
Introduction
N-Channel 900 V 15A (Tc) 78W (Tc) Through Hole TO-220AB
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