TPH3206PD
manufacturer:
Transphorm
Description:
GANFET N-CH 600V 17A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.6V @ 500µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
9.3 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
180mOhm @ 11A, 8V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±18V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
760 PF @ 480 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Transphorm
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Power Dissipation (Max):
96W (Tc)
Technology:
GaNFET (Gallium Nitride)
Base Product Number:
TPH3206
Introduction
N-Channel 600 V 17A (Tc) 96W (Tc) Through Hole TO-220AB
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