TP65H050G4BS
manufacturer:
Transphorm
Description:
650 V 34 A GAN FET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.8V @ 700µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
24 NC @ 10 V
Rds On (Max) @ Id, Vgs:
60mOhm @ 22A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1000 PF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperGaN®
Supplier Device Package:
TO-263
Mfr:
Transphorm
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Power Dissipation (Max):
119W (Tc)
Technology:
GaNFET (Gallium Nitride)
Base Product Number:
TP65H050
Introduction
N-Channel 650 V 34A (Tc) 119W (Tc) Surface Mount TO-263
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TP65H070LDG-TR |
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TP65H070G4PS |
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TP65H070G4LSGB-TR |
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TP90H050WS |
GANFET N-CH 900V 34A TO247-3
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|
TP65H050WSQA |
GANFET N-CH 650V 36A TO247-3
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TPH3206PD |
GANFET N-CH 600V 17A TO220AB
|
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|
TP90H180PS |
GANFET N-CH 900V 15A TO220AB
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|
TPH3208LDG |
GANFET N-CH 650V 20A 3PQFN
|
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|
TP65H150G4LSG-TR |
650 V 13 A GAN FET
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TP65H480G4JSG-TR |
GANFET N-CH 650V 3.6A 3PQFN
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