TP90H050WS
manufacturer:
Transphorm
Description:
GANFET N-CH 900V 34A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.4V @ 700µA
Operating Temperature:
-55°C ~ 150°C
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
17.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
63mOhm @ 22A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
900 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
980 PF @ 600 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Mfr:
Transphorm
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Power Dissipation (Max):
119W (Tc)
Technology:
GaNFET (Cascode Gallium Nitride FET)
Base Product Number:
TP90H050
Introduction
N-Channel 900 V 34A (Tc) 119W (Tc) Through Hole TO-247-3
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|---|---|---|---|
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TP65H070LDG-TR |
GANFET N-CH 650V 25A 3PQFN
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TP65H070G4PS |
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TP65H050WSQA |
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TPH3206PD |
GANFET N-CH 600V 17A TO220AB
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TP90H180PS |
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TPH3208LDG |
GANFET N-CH 650V 20A 3PQFN
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TP65H150G4LSG-TR |
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TP65H480G4JSG-TR |
GANFET N-CH 650V 3.6A 3PQFN
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TP65H050G4BS |
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