TP65H480G4JSG-TR
manufacturer:
Transphorm
Description:
GANFET N-CH 650V 3.6A 3PQFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 500µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs:
9 NC @ 8 V
Rds On (Max) @ Id, Vgs:
560mOhm @ 3.4A, 8V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±18V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
760 PF @ 400 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-PQFN (5x6)
Mfr:
Transphorm
Current - Continuous Drain (Id) @ 25°C:
3.6A (Tc)
Power Dissipation (Max):
13.2W (Tc)
Technology:
GaNFET (Cascode Gallium Nitride FET)
Base Product Number:
TP65H480
Introduction
N-Channel 650 V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)
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| Image | Part # | Description | |
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TP65H070LDG-TR |
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TP65H070G4PS |
GANFET N-CH 650V 29A TO220
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TP65H070G4LSGB-TR |
GANFET N-CH 650V 29A QFN8X8
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TP90H050WS |
GANFET N-CH 900V 34A TO247-3
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|
TP65H050WSQA |
GANFET N-CH 650V 36A TO247-3
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|
TPH3206PD |
GANFET N-CH 600V 17A TO220AB
|
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TP90H180PS |
GANFET N-CH 900V 15A TO220AB
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TPH3208LDG |
GANFET N-CH 650V 20A 3PQFN
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TP65H150G4LSG-TR |
650 V 13 A GAN FET
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TP65H050G4BS |
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