TP65H070G4PS
manufacturer:
Transphorm
Description:
GANFET N-CH 650V 29A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
9 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
638 PF @ 400 V
Series:
SuperGaN®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4.7V @ 700µA
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
85mOhm @ 18A, 10V
Mfr:
Transphorm
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
96W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Technology:
GaNFET (Gallium Nitride)
FET Feature:
-
Introduction
N-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB
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| Image | Part # | Description | |
|---|---|---|---|
|
|
TP65H070LDG-TR |
GANFET N-CH 650V 25A 3PQFN
|
|
|
|
TP65H070G4LSGB-TR |
GANFET N-CH 650V 29A QFN8X8
|
|
|
|
TP90H050WS |
GANFET N-CH 900V 34A TO247-3
|
|
|
|
TP65H050WSQA |
GANFET N-CH 650V 36A TO247-3
|
|
|
|
TPH3206PD |
GANFET N-CH 600V 17A TO220AB
|
|
|
|
TP90H180PS |
GANFET N-CH 900V 15A TO220AB
|
|
|
|
TPH3208LDG |
GANFET N-CH 650V 20A 3PQFN
|
|
|
|
TP65H150G4LSG-TR |
650 V 13 A GAN FET
|
|
|
|
TP65H480G4JSG-TR |
GANFET N-CH 650V 3.6A 3PQFN
|
|
|
|
TP65H050G4BS |
650 V 34 A GAN FET
|
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