GT080N08D5
Manufacturer:
Goford Semiconductor
Description:
N85V,65A,RD<8.5M@10V,VTH2.0V~4.0
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
39 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
1885 PF @ 50 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
8-DFN (4.9x5.75)
Rds On (Max) @ Id, Vgs:
8mOhm @ 20A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
69W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
85 V
Current - Continuous Drain (Id) @ 25°C:
65A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 85 V 65A (Tc) 69W (Tc) Surface Mount 8-DFN (4.9x5.75)
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| Image | Part # | Description | |
|---|---|---|---|
|
|
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|
|
|
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|
|
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|
GT065P06T |
P-60V,-82A,RD(MAX)<7.5M@-10V,VTH
|
|
|
|
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|
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|
GT180P08T |
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|
GT023N10M |
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|
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|
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|
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|
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|
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GT025N06AM6 |
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